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1

Rashba polarization in HgCdTe inversion layers at large depletion charges

V.F. Radantsev, V.V. Kruzhaev, G.I. Kulaev

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 199 KB

english, 2004

2

Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells

V.F. Radantsev, V.V. Kruzhaev

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2006

Language:

english

File:

PDF, 329 KB

english, 2006

3

Two-dimensional electron gas in semimagnetic semiconductor HgMnTe with inverted bands

V. B. Bogevolnov, I. M. Ivankiv, A. M. Yafyasov, V. F. Radantsev

Journal:

Journal of Experimental and Theoretical Physics

Year:

2001

Language:

english

File:

PDF, 148 KB

english, 2001

4

Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte

O. Yu. Shevchenko, V. F. Radantsev, A. M. Yafyasov, V. B. Bozhevol’nov, I. M. Ivankiv, A. D. Perepelkin

Journal:

Year:

2002

Language:

english

File:

PDF, 51 KB

english, 2002

5

Rashba splitting in MIS structures HgCdTe

V. F. Radantsev, A. M. Yafyasov

Journal:

Journal of Experimental and Theoretical Physics

Year:

2002

Language:

english

File:

PDF, 140 KB

english, 2002

6

Rashba effect in inversion and accumulation InAs layers

V. F. Radantsev, I. M. Ivankiv, A. M. Yafyasov

Journal:

Year:

2003

Language:

english

File:

PDF, 85 KB

english, 2003

7

Spin effects in the magneto-oscillations of the capacitance of a two-dimensional gas of semiconductors with Kane and Dirac spectra

V. F. Radantsev

Journal:

Journal of Experimental and Theoretical Physics

Year:

1999

Language:

english

File:

PDF, 157 KB

english, 1999

8

Zero-field spin splitting in HgTe surface quantum well

V.F. Radantsev, A.M. Yafyasov, V.B. Bogevolnov, I.M. Ivankiv, O.Yu. Shevchenko

Journal:

Surface Science

Year:

2001

Language:

english

File:

PDF, 168 KB

english, 2001

9

Strong magnetic field effect on over-the-barrier transport in Pb-p-Hg 1 − x Cd x Te Schottky barriers

Radantsev, V F, Zavyalov, V V

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 899 KB

english, 2013

10

Pseudoultrarelativistic behavior and specification of spinlike effects in the two-dimensional electron gas in Kane semiconductors with direct and inverted band structure

Radantsev, V. F., Deryabina, T. I., Kulaev, G. I., Rumyantsev, E. L.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 263 KB

english, 1996

11

KINETIC CONFINEMENT AND ZERO–ELECTRIC–FIELD BINDING IN HgCdTe ACCUMULATION LAYERS

RADANTSEV, V. F., KULAEV, G. I., KRUZHAEV, V. V.

Journal:

International Journal of Modern Physics B

Year:

2004

Language:

english

File:

PDF, 712 KB

english, 2004

12

BYCHKOV–RASHBA SPLITTING IN INVERSION LAYERS ON HEAVILY-DOPED p-HgCdTe

RADANTSEV, V. F., KULAEV, G. I., KRUZHAEV, V. V.

Journal:

International Journal of Nanoscience

Year:

2003

Language:

english

File:

PDF, 428 KB

english, 2003

13

BICHKOV–RASHBA SPIN–ORBIT SPLITTING IN KINETIC BINDING REGIME IN HgCdTe ACCUMULATION LAYERS

RADANTSEV, V. F., KRUZHAEV, V. V.

Journal:

International Journal of Nanoscience

Year:

2007

Language:

english

File:

PDF, 218 KB

english, 2007

14

Exchange and spin-orbit effects in inversion layers on the gapless semimagnetic semiconductor HgMnTe

V. F. Radantsev, A. M. Yafyasov, V. B. Bogevolnov

Year:

2001

Language:

english

File:

PDF, 281 KB

english, 2001

15

Spin-orbit splitting in the HgTe surface quantum well

V. F. Radantsev, A. M. Yafyasov, V. B. Bogevolnov, I. M. Ivankiv

Year:

2001

Language:

english

File:

PDF, 154 KB

english, 2001

16

Tunnelling in Pb-p-HgCdTe Schottky barriers in longitudinal and transverse magnetic fields

Zav'ialov, V V, Radantsev, V F

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 654 KB

english, 1994

17

Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe

Journal:

Semiconductor Science and Technology

Year:

1993

Language:

english

File:

PDF, 328 KB

english, 1993